Accession Number : ADD003967

Title :   Inverted Heterojunction Photodiode.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Andrews,Austin M , II ; Clarke,John E ; Gertner,Edward R ; Longo,Joseph T ; Eden,Richard C

Report Date : 03 May 1977

Pagination or Media Count : 5

Abstract : An inverted heterojunction photodiode for use as a laser detector sensitive to the 8-14 micrometers portion of the infrared spectrum and operable above 77 K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb .90Sn.10Te material on said substrate and a second active layer of a Pb.80Sn.20Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy. (Author)

Descriptors :   *Patents, *Photodiodes, *Heterojunctions, *Infrared detectors, Lasers, Epitaxial growth, Substrates, Lead tin tellurides

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE