Accession Number : ADD004409

Title :   Simultaneous Fabrication of CMOS Transistors and Bipolar Devices.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Ipri,Alfred C ; Sarace,John C

Report Date : 27 Sep 1977

Pagination or Media Count : 5

Abstract : A process for the simultaneous fabrication of CMOS transistors and bipolar devices on the same integrated circuit. The process follows the standard Silicon-Gate Deep Depletion technology up through gate definition. An additional mask step is included for definition of the base implant region. After the base diffusion the process again follows the standard approach resulting in a new structure which permits the fabrication of CMOS/SOS as well as a bipolar driver transistor. (Author)

Descriptors :   *Patents, *Integrated circuits, *Complementary metal oxide semiconductors, Silicon, Gates(Circuits), Transistors, Sapphire, Masking, Bipolar transistors

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE