Accession Number : ADD004480

Title :   Ion Implantation Method for the Fabrication of Gallium Arsenide Semiconductor Devices Utilizing an Aluminum Nitride Protective Capping Layer.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Welch,Bryant M ; Pashley,Richard D

Report Date : 15 Nov 1977

Pagination or Media Count : 8

Abstract : This document describes a method for forming tellurium N-type layers in gallium arsenide by using ion implantation as the doping process and aluminum nitride as a protective overcoat to prevent disassociation of the gallium arsenide during anneal. (Author)

Descriptors :   *Patents, *Semiconductor devices, *Gallium arsenides, *Ion implantation, *Tellurium, Semiconductor doping, Encapsulation, Aluminum compounds, Nitrides, Annealing, Microwave equipment

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE