Accession Number : ADD004697

Title :   Disappearing Alignment Marks for Election Beam Pattern Generation.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Watts,R K

Report Date : 29 Dec 1977

Pagination or Media Count : 8

Abstract : Alignment marks on x-ray lithography masks effectually disappear in semiconductor manufacture, a mylar substrate is covered with a 200 Angstrom gold film marks are 600 Angstroms thick, a layer of resist material covers the marks, fast alignment scans do not expose the resist so the pattern may be written over the marks; gold is then electroplated on the holes formed in the exposed portions of the resist, the resist and 200 Angstrom gold layers are removed to leave the pattern and 600 Angstrom marks (marks may be etched or left remaining depending upon the application). (Author)

Descriptors :   *Patent applications, *Reticles, Masking, Lithography, X rays, Patterns, Fabrication, Alignment, Electron beams

Subject Categories : Test Facilities, Equipment and Methods

Distribution Statement : APPROVED FOR PUBLIC RELEASE