Accession Number : ADD004711

Title :   Aluminum Arsenide Eutectic Gallium Arsenide Solar Cell.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Rahilly,William P

Report Date : 24 Jan 1978

Pagination or Media Count : 5

Abstract : An improved gallium arsenide solar cell is provided by forming a P+ layer on top of a wafer of plural vertical PN junction eutectic gallium arsenide crystal by liquid phase epitaxial growth of P doped GaAs followed by liquid phase epitaxial growth at Al sub x AsGa sub 1-x on the surface of the vertical PN junction substrate. The deposited GaAs layer with P dopant and the Al sub x AsGa sub 1-x layer forms horizontal P-N junctions with the N-type vertical regions. An N+ region is formed on the solar cell backside by ion implantation of an N dopant followed by a pulse electron beam current of the implanted region. (Author)

Descriptors :   *Patents, *Solar cells, *Aluminum gallium arsenide, *Eutectics, P type semiconductors, N type semiconductors, Junctions, Epitaxial growth, Liquid phases, Doping, Substrates, Surface properties, Implantation, Electron beams

Subject Categories : Electric Power Production and Distribution
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE