Accession Number : ADD004715

Title :   Virtually Nonvolatile Static Random Access Memory Device.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Schurmeyer,Fritz L ; Young,Charles R

Report Date : 24 Jan 1978

Pagination or Media Count : 6

Abstract : A high density, static, virtually nonvolatile, Random Access Memory (RAM) cell is disclosed in which variable threshold n-channel depletion mode Metal-Nitride-Oxide-Semiconductor (MNOS) transistors are the load devices for a pair of active, n-channel, enhancement mode, Insulated Gate Field Effect Transistors (IGFETs) in a flip-flop circuit. N-channel enhancement mode access transistors also IGFETs connect the cell to the bit line. Information is written in, and read, in volatile form conventionally. A +25 volt, 10 msec pulse applied to the gates of the depletion mode MNOS load devices transfers the data from the volatile mode to the nonvolatile mode. (Author)

Descriptors :   *Patents, *Random access computer storage, *Nonvolatile memories, Metal nitride oxide semiconductors, Integrated circuits, Flip flop circuits

Subject Categories : Electrical and Electronic Equipment
      Computer Hardware
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE