Accession Number : ADD004787
Title : Investigation of Near-Surface Electronic Properties in Semiconductors by Electron Beam Scanning.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Haas,George A ; Shih,Arnold ; Thomas,Richard E
Report Date : 22 Dec 1977
Pagination or Media Count : 31
Abstract : This document describes an electron-beam scanning system for investigating the nonuniformity of the work function, the position of the conduction-band edge with respect to the Fermi level, and the electron affinity at the surface of a single-crystal semiconductor. A small-diameter, low-energy electron beam is scanned over the surface to be investigated. The current collected by the surface for electron energies in the retarding-field region is related to the work function of the surface, whereas the current collected by the surface for electron energies in the accelerating-field region is related to the position of the conduction-band edge. The electron affinity is related to the combination of these relationships. Variations in the current collected by the surface for appropriately selected electron energies are used to provide a visual display of variations in these quantities.
Descriptors : *Patent applications, *Electronic scanners, *Semiconductors, *Surface properties, Conduction bands, Fermi surfaces, Single crystals, Electron beams, Electron energy
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE