Accession Number : ADD004903

Title :   Radiation Hardened Field Effect Device.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C

Personal Author(s) : Sokoloski,Martin M

Report Date : 16 Aug 1977

Pagination or Media Count : 6

Abstract : A semiconductor device which utilizes metallic electrodes whose work function can be altered so as to render the device insensitive to the harmful effects caused by exposure to a hostile radiation environment or other events which deleteriously influence the threshold voltage. The gate electrodes of the device consist of materials whose work function is changed by either desorbing or absorbing hydrogen. Depending upon whether the hydride has a larger or smaller work function than the unhydrated material, the invention desorbs or absorbs hydrogen in response to a signal from a sensing circuit which is activated by changes in the threshold voltage of the device. (Author)

Descriptors :   *Patents, *Field effect transistors, *Radiation hardening

Subject Categories : Electrical and Electronic Equipment
      Nuclear Radiation Shield, Protection & Safety

Distribution Statement : APPROVED FOR PUBLIC RELEASE