Accession Number : ADD004966

Title :   Vertically Integrated Circuits.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Aklufi,Monti E

Report Date : 02 Mar 1978

Pagination or Media Count : 17

Abstract : This document describes a vertically integrated circuit and method of manufacturing thereof characterized by the layering of thin films, such as silicon, and insulating films, such as silicon dioxide, and forming electrically active regions such as by ion implanting the necessary dopants into a three-dimensional matrix. (Author)

Descriptors :   *Patent applications, *Integrated circuits, Fabrication, Ion implantation, Layers, Silicon, Silicon dioxide, Matrix materials

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE