Accession Number : ADD005212

Title :   Quasi Static, Virtually Nonvolatile Random Access Memory Cell.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Schuermeyer,Fritz L ; Young,Charles R

Report Date : 23 May 1978

Pagination or Media Count : 6

Abstract : A nonvolatile Charge Injection Device (NOVCID) of Metal-Nitride-Oxide-Semiconductor (MNOS) material is operated in a novel manner in combination with a flip-flop to provide a charge pumped volatile memory storage system that can be continuously nondestructively read and on command, by applying a high positive potential to the field plate of the NOVCID, the information stored in the volatile mode is transferred to the nonvolatile state. To recover the stored information an alternating current signal is applied to the field plate. (Author)

Descriptors :   *Patents, *Nonvolatile memories, *Random access computer storage, *Integrated circuits, Metal nitride oxide semiconductors, Flip flop circuits, Alternating current, High voltage

Subject Categories : Computer Hardware

Distribution Statement : APPROVED FOR PUBLIC RELEASE