Accession Number : ADD005266

Title :   Method for Fabrication of High Minority Carrier Lifetime, Low to Moderate Resistivity, Single Crystal Silicon.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Rahilly,W Patrick

Report Date : 13 Jun 1978

Pagination or Media Count : 4

Abstract : A polycrystalline rod of silicon is refined by repeatedly passing it through a zone melt condition, then a dopant impurity is ion implanted in the polycrystalline rod and a seed crystal is attached. A final zone melt pass is then made converting the rod to single crystal structure and distributing the dopant. (Author)

Descriptors :   *Patents, *Silicon, *Fabrication, *Single crystals, Zone melting, Doping

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE