Accession Number : ADD005268

Title :   Fabrication of an Epitaxial Layer Diode in Aluminum Nitride on Sapphire.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Rutz,Richard Frederick

Report Date : 20 Jun 1978

Pagination or Media Count : 5

Abstract : An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of aluminum nitride and heating said composite in a particular atmosphere, resulting in the deposition of layers of aluminum nitride onto said coated substrate. (Author)

Descriptors :   *Patents, *Fabrication, *Diodes, *Aluminum compounds, *Nitrides, Sapphire, Substrates, Emittance

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE