Accession Number : ADD005283

Title :   A Self-Aligned Process for Fabricating Radiation Hard CMOS/SOS Devices.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Lee,Steven N

Report Date : 20 Jul 1978

Pagination or Media Count : 10

Abstract : The invention involves a self-aligned process for fabricating radiation hard semiconductor devices and includes the steps of irradiating a substrate with ions to form p-type regions, dividing the substrate into islands and depositing a masking material to form channel areas, growing a thick oxide over the exposed substrate material, removing the masking material, growing a radiation resistant gate oxide in place of the masking material and depositing alumininum metal over the structure after contact openings have been formed in the thick oxide. (Author)

Descriptors :   *Patent applications, *Semiconductor devices, *Radiation hardening, Fabrication, Ions, substrates, P type semiconductors, Gates(Circuits), Oxides, Masking, Sapphire, Metal oxide semiconductors

Subject Categories : Electrical and Electronic Equipment
      Nuclear Radiation Shield, Protection & Safety

Distribution Statement : APPROVED FOR PUBLIC RELEASE