Accession Number : ADD005338

Title :   Light Emitting Diode.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Clawson,Arthur R ; Wieder,Herman H

Report Date : 25 Apr 1978

Pagination or Media Count : 4

Abstract : The present invention relates to compositions useful in electroluminescent devices and to such devices. More particularly the present invention relates to a device of the light emitting diode type exhibiting a spectral output which can be adjusted to wavelength in the region of 1.06 micro m suitable for matching to optical fibers for communication purposes. Light emitting diodes which emit radiation in the infrared region have been made from the materials GaAs and InP. These have been made both by liquid phase epitaxial growth and vapor phase epitaxial growth.

Descriptors :   *Patents, *Light emitting diodes, Fiber optics, Liquid phases, Epitaxial growth, P type semiconductors, N type semiconductors, Indium phosphides, Arsenic compounds, Electroluminescence, Infrared radiation, Gallium arsenides, Vapor deposition, Optical communications

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE