Accession Number : ADD005446

Title :   A New Type of Superlattice.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C

Personal Author(s) : Esaki,Leo ; Tsu ,Raphael ; Sai-Halasz ,George Anthony ; Chang,Leroy Ligong

Report Date : 09 Jun 1978

Pagination or Media Count : 9

Abstract : A superlattic structure is disclosed in which alternating layers of semiconductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy. The invention described herein may be manufactured and used by or for the government for governmental purposes without the payment of any royalties thereon or therefor. (Author)

Descriptors :   *Patent applications, *Crystal lattices, Gallium antimonides, Arsenides, Indium compounds

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE