Accession Number : ADD005450

Title :   Injection Laser Structures with a Periodic Active Region.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C

Personal Author(s) : Esaki,Leo ; Chang,Leroy Ligong

Report Date : 09 Jun 1978

Pagination or Media Count : 5

Abstract : An injection laser structure is disclosed in which the active region comprises a periodic heterojunction structure in which narrow potential barriers produce well defined allowed states in included potential wells (included between the narrow potential barriers) thereby reducing the current threshold for laser action. In the preferred embodiment, the narrow potential barriers are formed from Ga sub 1-x A1 sub x As, and the potential wells are created in GaAs. (Author)

Descriptors :   *Patent applications, *Injection lasers, Semiconductors, Energy levels, Gallium arsenides, Life expectancy

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE