Accession Number : ADD005627

Title :   Method for Fabricating MNOS Memory Circuits.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Ipri,Alfred C ; Flatley,Doris W

Report Date : 01 Aug 1978

Pagination or Media Count : 5

Abstract : MNOS memory circuit fabrication problems that result in leakage, memory device depletion mode switching and leakage paths at the edges of silicon islands are eliminated by a production process in which deposited and thermal oxides are used as a diffusion mask on the island edges, selective control of the threshold level of the memory device is achieved by ion implantation, and a thick oxide is grown on the silicon island edges to control charge injection. (Author)

Descriptors :   *Patents, *Memory devices, Fabrication, Semiconductor devices

Subject Categories : Computer Hardware

Distribution Statement : APPROVED FOR PUBLIC RELEASE