Accession Number : ADD005638
Title : Narrow-Band Inverted Homo-Heterojunction Avalanche Photodiode.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C
Personal Author(s) : Eden,Richard C ; Nakano,Kenichi
Report Date : 29 Aug 1978
Pagination or Media Count : 7
Abstract : A narrow-band, inverted homo-heterojunction avalanche photodiode is described which is configured in the shape of a mesa situated upon a substrate which is transparent to selected light energy wavelengths. The diode is inverted for operation such that the incoming light energy enters the substrate side, passes through a wavelength selective buffer layer and is absorbed upon entering the succeeding, active region. Avalanche gain is attained by drift from the area of absorption to the high field p-n homo-heterojunction located immediately thereafter. The device exhibits low levels of noise during operation because absorption is occurring in a low field region and because the ionization and breakdown noise associated with lattice mismatches is avoided through the formation of the p-n homo-heterojunction in one continuous growth process. Appropriate passivation of the mesa walls inhibits surface leakage and breakdown effects.
Descriptors : *Patents, *Photodiodes, *Avalanche diodes, *Fabrication, Semiconductor devices, Semiconductors, Narrowband, Heterojunctions, Gallium arsenides, Substrates, Gallium alloys, Arsenic alloys, Antimony alloys
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE