Accession Number : ADD005654

Title :   Ion Implanted Eutectic Gallium Arsenide Solar Cell.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Rahilly,William P

Report Date : 26 Sep 1978

Pagination or Media Count : 5

Abstract : This patent describes an improved gallium arsenide solar cell is provided by ion implanting both the top and bottom of a plural vertical PN junction eutectic gallium arsenide cell body to obtain an electrical drift field, with multiple ion implants progressively larger in dose and progressively lower in implant energies to provide a P-type ion implanted top layer having a common connection to all P regions of the cell body and an N-type ion implanted bottom layer having a common connection to all N regions of the cell body. The implanted regions of the cell are pulsed electron beam annealed at room temperature. (Author)

Descriptors :   *Patents, *Solar cells, *Eutectic composites, *Ion implantation, Gallium arsenides, P type semiconductors, N type semiconductors, Junctions, Electric fields, Drift, Annealing, Electron beams

Subject Categories : Electric Power Production and Distribution
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE