Accession Number : ADD005926

Title :   Band Interacting Tunnel Heterojunctions.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C

Personal Author(s) : Sai-Halasz,G A ; Esaki,L

Report Date : 29 Jan 1979

Pagination or Media Count : 17

Abstract : A bilateral tunnel device having a voltage dependent transfer coefficient is disclosed which includes a heterostructure consisting of a first layer of GaSb(1-y)AS(y,) a second layer of In(1-x)Ga(x)As, and a third layer of GaSb(1-7)As(7). The thicknesses of the first and third layers are not critical but the thickness of the second layer must be less than 200 angstroms thick. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel device of the instant invention. (Author)

Descriptors :   *Patent applications, *Tunneling(Electronics), *Heterojunctions, Gallium arsenides, Antimony compounds, Indium compounds, Layers, Voltage, Tunnel diodes, Impedance, Electrical conductivity, Band spectra, Interactions

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE