Accession Number : ADD005982

Title :   Radiation Dose Rate Hardened Light Detector.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Maier,Roe J , Jr

Report Date : 03 Apr 1979

Pagination or Media Count : 3

Abstract : A radiation dose rate hardened light detector uses a Schottky diode island on a sapphire substrate. The thickness of the silicon is carefully adjusted to produce interference absorption at the light wavelength of interest. The light enters the silicon through the sapphire and is reflected off a metal electrode to produce the interference at the silicon-sapphire interface. (Author)

Descriptors :   *Patents, *Light transmission, *Schottky Barrier devices, *Light emitting diodes, Sapphire, Substrates, Silicon, Absorption spectra, Reflectivity, Metals, Electrodes, Interference, Dose rate, Radiation hardening, Hardened structures

Subject Categories : Electrooptical and Optoelectronic Devices
      Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE