Accession Number : ADD005996

Title :   Surface Passivation of IV-VI Semiconductors with As2S3.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Schoolar,Richard B ; Jensen,James D

Report Date : 21 Nov 1978

Pagination or Media Count : 9

Abstract : The process of coating epitaxial films of lead chalcogenide materials with As2S3 to insulate the films from the effects of oxygen upon exposure to air. (Author)

Descriptors :   *Patents, *Semiconductors, *Surface finishing, *Lead compounds, *Chalcogens, Arsenic sulfides, Passivity, Oxygen, Absorption, Coefficients, P type semiconductors, Thin films, Epitaxial growth, Exposure(General)

Subject Categories : Inorganic Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE