Accession Number : ADD006020

Title :   Investigation of Near-Surface Electronic Properties in Semiconductors by Electron Beam Scanning.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Haas,George A ; Shih,Arnold ; Thomas,Richard E

Report Date : 13 Mar 1979

Pagination or Media Count : 11

Abstract : An electron-beam scanning system for investigating the nonuniformity of (1) the work function, (2) the position of the conduction-band edge with respect to the Fermi level, and (3) the electron affinity at the surface of a single-crystal semiconductor. A small-diameter, low-energy electron beam is scanned over the surface to be investigated. The current collected by the surface for electron energies in the retarding-field region is related to the work function of the surface, whereas the current collected by the surface for electron energies in the accelerating-field region is related to the position of the conduction-band edge. The electron affinity is related to the combination of these relationships. Variations in the current collected by the surface for appropriately selected electron energies are used to provide a visual display of variations in these quantities. (Author)

Descriptors :   *Patents, *Electron beams, Scanning, Semiconductors, Circuits, Electrical properties, Surfaces, Surface properties, Single crystals

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE