Accession Number : ADD006022

Title :   Method for Determining Conduction-Band Edge and Electron Affinity in Semiconductors.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Haas,George A ; Shih,Arnold ; Thomas,Richard E

Report Date : 27 Feb 1979

Pagination or Media Count : 8

Abstract : A method which utilizes low-energy electron reflections to determine the electron affinity and to simultaneously locate the position of the conduction-band edge with respect to the Fermi level at the surface of a single-crystal semiconductor. A beam of very-low-energy electrons (less than 10eV) is directed onto the surface of the semiconductor and the reflection pattern (beam energy v. current collected by the semiconductor) is analyzed using a kinematical approximation for the interference phenomena. (Author)

Descriptors :   *Patents, *Semiconductors, Conduction bands, Electron energy, Electron beams

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE