Accession Number : ADD006104

Title :   Equilibrium Growth Technique for Preparing PbS sub x Se sub (1-x) Epilayers.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Schoolar,Richard B

Report Date : 15 May 1979

Pagination or Media Count : 21

Abstract : A high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, wherein x varies between one and zero, inclusive, and a=0.500 + or - 0.003, deposited upon substrates of barium fluoride, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the substrate is exposed to the vapor emanating from the single chimney of a two zone, dual-chamber furnace, thereby providing an epilayer of uniform, and predetermined electrical and optical properties. (Author)

Descriptors :   *Patents, *Epitaxial growth, *Selenium alloys, *Thin films, *Lead sulfides, Layers, Materials, Preparation, Conductivity, Charge carriers, Equilibrium(General), Photovoltaic effect, Chalcogens

Subject Categories : Physical Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE