Accession Number : ADD006181

Title :   Method of Fabricating a High Electrical Frequency Infrared Detector by Vacuum Deposition.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Schoolar,Richard B

Report Date : 12 Jun 1979

Pagination or Media Count : 12

Abstract : This invention relates to a thin-film single-crystal infrared detector exhibiting an incresed frequency of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection. (Author)

Descriptors :   *Patents, *Infrared detectors, Single crystals, High frequency, Vacuum deposition, Electrical properties, Fabrication, Diffusion, Electrodes, Epitaxial growth, Response, Geometry, Substrates, Thin films

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE