Accession Number : ADD006182
Title : Iron-Doped Indium Phosphide Semiconductor Laser.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Bishop,Stephen G ; McCombe,Bruce D ; Koschel,Wulf H
Report Date : 12 Jun 1979
Pagination or Media Count : 5
Abstract : This invention relates to an iron-doped indium phosphide or gallium arsenide semiconductor laser. The semiconductor material is doped when formed by uniformly distributing transition metal ions such as iron throughout the semiconductor. The concentration of the iron ions is from about 10 to the 15th power to about 10 to the 18th power ions per cubic centimeter, but is limited only by the solubility of iron indium phosphide or gallium arsenide. It has been determined that the greater the concentration of ions, the easier the laser emission is obtained. At liquid helium temperature, the iron-doped semiconductor laser will operate at a wave-length near 3 microns.
Descriptors : *Patents, *Semiconductor lasers, *Indium phosphides, *Gallium arsenides, Infrared lasers, Doping, Iron, Transition metals, Ions, Helium, Crystal growth, Optical properties
Subject Categories : Lasers and Masers
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE