Accession Number : ADD006230

Title :   Flipped Method for Characterization of Epitaxial Layers.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Wong,Theodore T S

Report Date : 10 Oct 1978

Pagination or Media Count : 4

Abstract : A flipped layer method is used to characterize epitaxial layers on a first substrate. A second substrate is attached to the epitaxial layer, and the first substrate and a portion of the epitaxial layer are then removed. Measurements are then performed on the remaining portion of the epitaxial layer. (Author)

Descriptors :   *Patents, *Epitaxial growth, *Substrates, *Layers, *Semiconductors, *Measurement, Cadmium tellurides, Single crystals

Subject Categories : Test Facilities, Equipment and Methods
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE