Accession Number : ADD006271

Title :   Memory Transistor.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Brody,Philip S

Report Date : 13 Mar 1979

Pagination or Media Count : 5

Abstract : This patent discloses a memory transistor in which a photovoltaic-ferroelectric element is connected between the gate and source of a field effect transistor. The element stores a remanent polarization in a direction corresponding to the polarity of a voltage to be applied to the transistor, and when the element is illuminated the voltage is generated and is applied. A restorable cross-coupled flip-flop in which memory information is stored in a pair of photovoltaic-ferroelectric elements. If power is lost, the elements are illuminated and the information which was lost from the memory is restored. (Author)

Descriptors :   *Patents, *Memory devices, *Ferroelectric materials, Photovoltaic effect, Field effect transistors, Data storage systems, Polarization, Gates(Circuits), Flip flop circuits, Nonvolatile memories

Subject Categories : Computer Hardware

Distribution Statement : APPROVED FOR PUBLIC RELEASE