Accession Number : ADD006285

Title :   Bonded Cathode and Electrode Structure with Layered Insulation and Method of Manufacture.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Oliver,David W ; Trzaskos,Casmir R

Report Date : 09 May 1979

Pagination or Media Count : 50

Abstract : An object of the invention is to improve the longterm resistance stability of the insulating layer between the cathode and the grid (and also the heater) in a bonded grid-cathode tube. Features of the invention relate to the structure and manufacture method in which diffusion barriers of silicon nitride are incorporated in the insulating layer. In particular, with a principal insulator of boron nitride, thin films of silicon nitride are used between it and the cathode, and also between it and the grid. As a further detail feature, an additional thin film of BN is used for stress relief next to the cathode.

Descriptors :   *Patent applications, *Electron tube parts, *Insulation, Microwave tubes, Cathodes(Electron tubes), Tube grids, Vapor deposition, Boron nitrides, Silicon nitrides, Iridium, Tungsten, Layers, Power amplifiers, Stress relieving

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE