Accession Number : ADD006317

Title :   Nonvolatile Punch through Memory Cell with Buried N+ Region in Channel.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Schuermeyer,Fritz L ; Young,Charles R

Report Date : 07 Aug 1979

Pagination or Media Count : 6

Abstract : A nonvolatile memory cell is disclosed that has a buried n+ layer from which charge (electrons is injected into the insulator of n-channel MNOS (Metal Nitride Oxide Semiconductor) type devices. (Author)

Descriptors :   *Patents, *Nonvolatile memories, Metal nitride oxide semiconductors, Charge transfer

Subject Categories : Computer Hardware
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE