Accession Number : ADD006726

Title :   Microwave InP/SiO2 Insulated Gate Field Effect Transistor.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Messick,Louis J

Report Date : 17 Jul 1979

Pagination or Media Count : 6

Abstract : An InP/SiO2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator. (Author)

Descriptors :   *Patents, *Field effect transistors, *Microwave equipment, Gates(Circuits), Indium phosphides, N type semiconductors, Silicon dioxide, Epitaxial growth, Substrates, Electrical insulation, Deposition, Thin films, Power gain

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE