Accession Number : ADD006732

Title :   Method of Anodically Leveling Semiconductor Layers.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Collins ,David A ; Lile,Derek L

Report Date : 04 Sep 1979

Pagination or Media Count : 4

Abstract : A method for the thinning and automatic leveling of layers of a semiconductor for use in device fabrication applications. The method is to be employed with anodic thinning wherein a conducting semiconductor layer on a high resistivity substrate is placed in a suitable electrolyte and voltage is applied so that the sample is made positive with respect to a cathode, also immersed in the electrolyte. The instant method is directed to the anodic thinning of irregularities in the semiconductor by slowly immersing the semiconductor into the electrolyte such that the location of irregularities can be determined and processed by monitoring the anodic process. (Author)

Descriptors :   *Patents, *Semiconductors, *Thickness, *Electrolysis, Surface roughness, Layers, Reduction, Anodes(Electrolytic cell), Electrolytes

Subject Categories : Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE