Accession Number : ADD006755

Title :   Method and Apparatus for the Analysis of Semi-Conductors.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Garber ,Wilbur A

Report Date : 10 Aug 1979

Pagination or Media Count : 14

Abstract : Described is a method for obtaining, for analyzation, the current induced in the insulating regions of a MOS semiconductor device, when irradiated by high energy electrons in a scanning electronic microscope; the steps include blanking the electron beam, allowing current in the substrate to dissapate, after a selected delay detecting the desired induced current and analyzing it for any number of desired purposes. (Author)

Descriptors :   *Patent applications, *Metal oxide semiconductors, *Test methods, *Test equipment, Electron microscopy, Scanning, Electron irradiation, High energy, Electric current, Measurement

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE