Accession Number : ADD006851

Title :   Surface Barrier Tailoring of Semiconductor Devices Utilizing Scanning Electron Microscope Produced Ionizing Radiation.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Millea,Michael F

Report Date : 22 Jan 1980

Pagination or Media Count : 5

Abstract : A method of spatially tailoring the surface barrier of MOS devices by means of a scanning electron microscope using ionizing radiation at the silicon dioxide-silicon interface to control the surface charge distribution. The MOS is subsequently annealed at about 300 C. for several hours to stabilize the surface potential. (Author)

Descriptors :   *Patents, *Metal oxide semiconductors, *Electron microscopy, *Electronic scanners, *Trapping(Charged particles), Silicon, Silicon dioxide, Interfaces, Ionizing radiation, Surfaces, Surface properties, Annealing, Inventions

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE