Accession Number : ADD006903

Title :   Single Crystal Thin Films.

Descriptive Note : Patent Application,


Personal Author(s) : Aklufi,Monti E

Report Date : 01 Oct 1979

Pagination or Media Count : 19

Abstract : A method of developing a layer of single crystal material on the surface of a body such as an insulator, an amorphous or polycrystalline thin film layer of another single crystal and devices created thereby. The single crystal layer that is developed according to the present invention may be formed from an amorphous material or a polycrystalline film. A single crystal seed is placed in juxtaposition to the body and in contact with the amorphous or polycrystalline material to be developed into the single crystal material. a laser or other controlled energy beam is applied to the region of contact between the single crystal seed and the amorphous or polycrystalline material to be converted. Application of the controlled energy beam creates a localized activated region where the film to be converted is in contact with the single crystal seed. The amorphous or polycrystalline film is restructured into single crystal material with its orientation determined by the seed. The beam may then be swept across the entire surface of the amorphous or polycrystalline material to be converted, thereby converting such material in its entirety to single crystal material. Single crystal semiconductor devices formed by the present method are also described. (Author)

Descriptors :   *Patent applications, *Thin films, *Single crystals, *Epitaxial growth, Semiconducting films, Inventions, Crystal growth, Seeds, Polycrystalline, Amorphous materials, Laser beams, Semiconductor devices

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE