Accession Number : ADD006906

Title :   Normally Off InP Field Effect Transistor.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Collins,David A ; Lile,Derek L

Report Date : 04 Sep 1979

Pagination or Media Count : 8

Abstract : A normally off insulated gate field effect transistor having a p-type single crystal InP substrate with source and drain contacts spaced apart and disposed thereon with a layer of silicon dioxide disposed over the InP material in the space between the contacts and a gate electrode disposed on the silicon dioxide to completely bridge the space between the contacts. The p-type single crystal InP substrate may be replaced by a p-type epitaxial InP material disposed on a semi-insulating InP substrate. (Author)

Descriptors :   *Patent applications, *Field effect transistors, *Indium phosphides, *Substrates, P type semiconductors, Gates(Circuits), Epitaxial growth, Silicon dioxide, Electrodes

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE