Accession Number : ADD007044

Title :   An Improved Laser Technique for Accurately Determining the Compensation Density in n-Type Narrow Gap Semiconductor.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Bartoli,Filbert J ; Meyer,Jerry R

Report Date : 28 Feb 1980

Pagination or Media Count : 16

Abstract : This document discloses a method for accurately determining the compensation density of n-type narrow-gap semiconductors. A semiconductor sample is irradiated with laser pulses of a particular density and pulse width for a particular time length with the sample maintained at a low temperature to generate photo-excited carriers within the semiconductor sample. Photo-Hall measurements are made on the semiconductor sample during and after the laser pulse to determine the mobility, mu, and carrier density, n, as a function of time using suitable equipment such as a computer controlled digital processing oscilloscope to display the curves. The curves displayed by the oscilloscope are compared with previously calculated curves to obtain a match and thereby determine the quality of the sample. By combining mesurements of the Hall effect and conductivity, one can deduce the carrier densities and mobilities as well as other various quantities by well-known formulas.

Descriptors :   *Patent applications, *Narrow gap semiconductors, *Energy levels, *Optical detection, Laser beams, Light pulses, Hall effect, Carrier mobility, N type semiconductors, Energy gaps, Photodetectors

Subject Categories : Optical Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE