Accession Number : ADD007234

Title :   Graded Gap Semiconductor Detector.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Jensen,James D ; Schoolar,Richard B

Report Date : 25 Apr 1980

Pagination or Media Count : 40

Abstract : A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, (Pb sub 1-w Cd sub w) a (S) sub 1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500 + or - 0.003), deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers. (Author)

Descriptors :   *Patent applications, *Epitaxial growth, *Chalcogens, *Lead sulfides, Cadmium sulfides, Electrical properties, Optical properties, Optical lenses, Infrared optical materials, Chemical composition, Control

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE