Accession Number : ADD007247

Title :   Microwave InP/SIO2 Insulated Gate Field Effect Transistor.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Messick,Louis J

Report Date : 18 Mar 1980

Pagination or Media Count : 6

Abstract : AN InP/SiO2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator. (Author)

Descriptors :   *Patents, *Field effect transistors, Silicon dioxide, Gates(Circuits)

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE