Accession Number : ADD007502

Title :   Rare Earth Semiconductor Laser.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Morrison,Clyde A ; Karayianis,Nick ; Wortman,Donald E

Report Date : 11 Mar 1980

Pagination or Media Count : 4

Abstract : A rare earth semiconductor laser is disclosed comprising a semiconductor material of the type Ln2TX5 where Ln is a rare earth element, T is zirconium or hafnium, and x is sulfur or selenium. The semiconductor contains neodymium as a dopant rare earth ion and can be made to lase by applying an electric voltage. (Author)

Descriptors :   *Patents, *Semiconductor lasers, *Rare earth elements, Zirconium compounds, Sulfur, Hafnium compounds, Ions, Selenium compounds, Neodymium compounds, Doping, Electric current, Inventions

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE