Accession Number : ADD007585

Title :   Method of Selectively Etching a Semiconductor Substrate.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Rible,Vincent E ; Korolkoff,Nicholas O ; Marshall,Sidney

Report Date : 22 May 1980

Pagination or Media Count : 6

Abstract : The general object of this invention is to provide a method of selectively etching a semiconductor substrate. A further object is to provide such a method in which the resistance of photoresist masking films to semiconductor etchants is increased so that deep etching can take place either through long exposure periods or through the use of vigorous etchants. (Author)

Descriptors :   *Patent applications, *Semiconductors, *Etching, *Selection, *Substrates, Photoresistors, Photoelectric cells(Semiconductor), Ion implantation, Ion bombardment, Films, Layers, Exposure(General), Inventions

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE