Accession Number : ADD007735

Title :   Low Temperature CMOS/SOS Process Using Dry Pressure Oxidation.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Marshall,Sidney ; Zeto,Robert J

Report Date : 25 Dec 1979

Pagination or Media Count : 4

Abstract : An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800 C to 825 C using ion implantation for all doping operations and plasma definition of all masking dielectrics. (Author)

Descriptors :   *Patents, *Complementary metal oxide semiconductors, *Oxidation, Dry materials, Oxygen, Plasmas(Physics), Ion implantation, Low temperature, Gates(Circuits), Dielectrics, Sapphire, Silicon, Oxides

Subject Categories : Physical Chemistry
      Plasma Physics and Magnetohydrodynamics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE