Accession Number : ADD007765

Title :   Growing Doped Single Crystal Ceramic Materials.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : DeLai,A Joseph ; Gazzara,Charles P

Report Date : 29 Jan 1980

Pagination or Media Count : 4

Abstract : An improved process for growing single crystals of ceramic material according to the gradient furnace technique is disclosed. The process combines the gradient furnace technique with principles of zone leveling and comprises seeding the melt of a ceramic material in a crucible, heating the crucible to above the melting point of the material and solidifying the material to form a single crystal by extracting heat from the bottom portion of the crucible. The application of zone leveling principles to this system comprises melting the ceramic material by creating a molten zone at the bottom portion of the crucible and passing the zone up the crucible to progressively melt successive portions of the ceramic material therein. (Author)

Descriptors :   *Patents, *Ceramic materials, *Single crystals, *Doping, *Crystal growth, Crucibles, Furnaces, Melting point, Seeding, Gradients, Heat, Extraction, Inventions

Subject Categories : Ceramics, Refractories and Glass
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE