Accession Number : ADD007787

Title :   Method of Making Gete Infrared Detector.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Goetz,Raymond J

Report Date : 25 Aug 1980

Pagination or Media Count : 7

Abstract : A method of fabricating a GeTe infrared detector using a photolithographic process. An amorphous film of GeTe is vacuum deposited on a high mass and low thermal conductive substrate. The film of GeTe is covered with a photoresist layer which is developed into a mask. The GeTe is then selectively etched through the photoresist mask using ferric chloride. The photoresist mask is removed and electrical conductors are vacuum deposited on the GeTe film and selectively etched through a photoresist pattern. The conductor can also be deposited on the substrate etched prior to deposition of the GeTe layer. (Author)

Descriptors :   *Patent applications, *Infrared detectors, *Photolithography, Germanium compounds, Tellurium compounds, Masking, Electrodes, Substrates, Photoresistors, Electric conductors

Subject Categories : Printing and Graphic Arts
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE