Accession Number : ADD007852
Title : Growth Technique for Preparing Graded Gap Semiconductors and Devices.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Jensen,James D ; Schoolar,Richard B
Report Date : 14 Oct 1980
Pagination or Media Count : 19
Abstract : A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide), deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
Descriptors : *Patents, *Semiconductors, *Semiconductor devices, *Epitaxial growth, Ternary compounds, Lead alloys, Chalcogens, Cadmium sulfides, Substrates, Barium compounds, Fluorides, Thermodynamic properties, Electrical properties, Optical properties, Lenses, Heterojunctions, Lasers
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE