Accession Number : ADD007927

Title :   Controlled Absorption in Heterojunction Structures.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Chang,Leroy L ; Esaki,Leo ; Sai-Halasz,George A

Report Date : 17 Jun 1980

Pagination or Media Count : 4

Abstract : A heterojunction structure made of two semiconductor layers is disclosed in which light is applied to the structure and absorbed, and the emission of light from the structure is controlled by an electric field applied perpendicularly to the planes of the layers. It is further disclosed that the device can be employed as a selective light filter or modulator. (Author)

Descriptors :   *Patents, *Semiconductor devices, *Heterojunctions, Optical equipment, Gallium arsenides, Valence bands, Emission, Layers, Light modulators

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE