Accession Number : ADD007932

Title :   Infrared Optical Devices of Layered Structure.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Esaki,Leo ; Sai-Halasz,George A ; Chang,Leroy L

Report Date : 27 May 1980

Pagination or Media Count : 4

Abstract : An optical device is disclosed which includes first and second superlattice semiconductor regions. The first superlattice semiconductor regions. The first supperlattice semiconductor region includes a plurality of alternating barrier and light absorbing layers which absorbs light of a first light frequency. The second superlattice region also includes a plurality of alternating barrier and light absorbing layers. However, the light absorbing layers of the second superlattice semiconductor region absorbs light of a different frequency. (Author)

Descriptors :   *Patents, *Infrared detectors, *Infrared optical systems, Semiconductors, Energy levels, Radiation absorption, Frequency response

Subject Categories : Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE