Accession Number : ADD007962

Title :   Tunnel Diode.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Esaki,Leo

Report Date : 15 Apr 1980

Pagination or Media Count : 4

Abstract : A tunnel diode is disclosed which includes a heterostructure consisting of a first layer of GaSb1-yAsy and a second layer of In1-xGaxAs. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel diode of the instant invention. (Author)

Descriptors :   *Patents, *Tunnel diodes, Semiconductor devices, Alloys, Doping, High frequency, Group III compounds, Group V compounds, Gallium arsenides, Gallium antimonides, Indium compounds

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE