Accession Number : ADD007987

Title :   Method for Epitaxial Growth of GaAs Films and Devices Configuration Independent of GaAs Substrate Utilizing Molecular Beam Epitaxy and Substrate Removal Techniques.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Davey,John E ; Christou,Aristos

Report Date : 07 Oct 1980

Pagination or Media Count : 6

Abstract : A method of growing high-quality, super-abrupt, thin-film epitaxial layers independent of a GaAs substrate is disclosed. An elemental semiconductor of germanium is used to initiate growth of an active material, typically doped n-type. A semi-insulating layer or n + layer is grown on the n-type active material. Subsequent to growth of the semi-insulating layer, a thin cap of germanium is deposited on the composite. Gold is deposited onto the germanium cap to form an eutectic-alloy layer with the germanium. The alloy is formed and the composite is bonded to a metal, glass, or ceramic substrate and the semiconductor(germanium) is removed by etching and the n-layer is finally etched to provide a clean-up and to tailor the layer to a desired thickness. Subsequent steps are employed to form desired structures such as field-effect transistors or Schottky-barrier devices. (Author)

Descriptors :   *Patents, *Epitaxial growth, *Gallium arsenides, *Films, *Semiconductor devices, *Molecular beams, N type semiconductors, Substrates, Removal, Methodology, Layers, Thin films, Germanium compounds, Gold alloys, Deposition, Schottky barrier devices, Field effect transistors, Inventions, Eutectics, Bonding, Composite materials, Etching

Subject Categories : Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE